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60 V, dual N-channel Trench MOSFET
Description
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Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, dual N-channel Trench MOSFET
60 V, dual N-channel Trench MOSFET
| Part | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Technology | Vgs(th) (Max) @ Id | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Current - Continuous Drain (Id) @ 25°C | FET Type | Supplier Device Package | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | 6-TSSOP SC-88 SOT-363 | 1 nC | 60 V | MOSFET (Metal Oxide) | 2.1 V | Surface Mount | -55 °C | 150 °C | 23.6 pF | 20 V | 10 V | 5 V | 270 mA | N-Channel | 6-TSSOP | 1.67 W 310 mW | 2.8 Ohm |