SQ4431 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 30V 10.8A 8SOIC
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [y] | Package / Case [x] | Vgs (Max) | FET Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Qualification | Grade | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Technology | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 30 mOhm | 10.8 A | 8-SOIC | 3.9 mm | 0.154 in | 20 V | P-Channel | 8-SOIC | 25 nC | 30 V | 6 W | -55 °C | 175 ░C | 2.5 V | AEC-Q101 | Automotive | 1265 pF | 4.5 V 10 V | MOSFET (Metal Oxide) | Surface Mount |