V8P6 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 4.2A TO277A
| Part | Voltage - Forward (Vf) (Max) @ If | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Mounting Type | Technology | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 610 mV | 3-PowerDFN TO-277 | 150 °C | -40 °C | TO-277A (SMPC) | 200 mA 500 ns | 600 µA | 60 V | 4.2 A | Surface Mount | Schottky | ||
Vishay General Semiconductor - Diodes Division | 610 mV | 3-PowerDFN TO-277 | 150 °C | -40 °C | TO-277A (SMPC) | 200 mA 500 ns | 600 µA | 60 V | 8 A | Surface Mount | Schottky | AEC-Q101 | Automotive |
Vishay General Semiconductor - Diodes Division | 610 mV | 3-PowerDFN TO-277 | 150 °C | -40 °C | TO-277A (SMPC) | 200 mA 500 ns | 600 µA | 60 V | 4.2 A | Surface Mount | Schottky |