SIHB180 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 600V 19A D2PAK
| Part | Technology | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 30 V | -55 °C | 150 °C | N-Channel | 5 V | 600 V | 10 V | 156 W | 1085 pF | TO-263 (D2PAK) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 180 mOhm | Surface Mount | 19 A |