FQP13N10L Series

Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FQP13N10L	180 mOhm	100 V	N-Channel	MOSFET (Metal Oxide)	12.8 A	Through Hole	65 W	12 nC	TO-220-3	20 V	10 V	5 V	-55 °C	175 ░C	2 V	TO-220-3	520 pF

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220

Key Features

• 12.8A, 100V, RDS(on)= 180mΩ(Max.) @VGS= 10 V, ID= 6.4A

• Low gate charge ( Typ. 8.7nC)

• Low Crss( Typ. 20pF)

• 100% avalanche tested

• 175°C maximum junction temperature rating

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.