FDMC7660DC Series

N-Channel Dual CoolTM 33 PowerTrench® MOSFET 30V, 40A, 2.2mΩ

Catalog

N-Channel Dual CoolTM 33 PowerTrench® MOSFET 30V, 40A, 2.2mΩ

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDMC7660DC	20 V	-55 °C	150 °C	Surface Mount	2.5 V	MOSFET (Metal Oxide)	30 V	2.2 mOhm	N-Channel	Dual Cool ™ 33	3 W 78 W	5170 pF	4.5 V 10 V	30 A 40 A	8-PowerTDFN	76 nC

Catalog

N-Channel Dual CoolTM 33 PowerTrench® MOSFET 30V, 40A, 2.2mΩ

Key Features

• Dual Cool™ Top Side Cooling PQFN package

• Max rDS(on)= 2.2 mΩ at VGS= 10 V, ID= 22 A

• Max rDS(on)= 3.3 mΩ at VGS= 4.5 V, ID= 18 A

• High performance technology for extremely low rDS(on)

• Termination is Lead-free and RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.