IXTH68P20T Series

DiscMSFT PChan-Trench Gate TO-247AD

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFT PChan-Trench Gate TO-247AD

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package
Littelfuse/Commercial Vehicle Products IXTH68P20T	MOSFET (Metal Oxide)	33400 pF	68 A	380 nC	10 V	568 W	-55 °C	150 °C	TO-247-3	200 V	15 V	Through Hole	55 mOhm	P-Channel	4 V	TO-247 (IXTH)

Catalog

DiscMSFT PChan-Trench Gate TO-247AD

Key Features

• Fast intrinsic diode

• Low Qgand RDSon

• Avalanche rated

• Extended FBSOA

• International standard packages

Description

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching