1N6482 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO213AB
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Speed [Min] | Package / Case | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 175 ░C | -65 C | Surface Mount | DO-213AB | 600 V | 1 A | 200 mA 500 ns | DO-213AB MELF (Glass) | 8 pF | 10 µA | 1.1 V | Standard |
Vishay General Semiconductor - Diodes Division | 175 ░C | -65 C | Surface Mount | DO-213AB | 600 V | 1 A | 200 mA 500 ns | DO-213AB MELF (Glass) | 8 pF | 10 µA | 1.1 V | Standard |
Vishay General Semiconductor - Diodes Division | 175 ░C | -65 C | Surface Mount | DO-213AB | 600 V | 1 A | 200 mA 500 ns | DO-213AB MELF (Glass) | 8 pF | 10 µA | 1.1 V | Standard |