FDB9403L_F085 Series

N-Channel Logic Level PowerTrench® MOSFET, 40 V, 110 A, 1.2 mΩ

Catalog

N-Channel Logic Level PowerTrench® MOSFET, 40 V, 110 A, 1.2 mΩ

Part	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Qualification	Grade	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
ON Semiconductor FDB9403L-F085	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	-55 °C	175 ░C	3 V	40 V	N-Channel	110 A	20 V	333 W	1.2 mOhm	AEC-Q101	Automotive	MOSFET (Metal Oxide)	245 nC	13500 pF	TO-263 (D2PAK)

N-Channel Logic Level PowerTrench® MOSFET, 40 V, 110 A, 1.2 mΩ

• Typical RDS(on)= 1.0 mΩ at VGS= 10V, ID= 80 A

• Typical Qg(tot)= 186 nC at VGS= 10V, ID= 80 A

• UIS Capability

• RoHS Compliant

• Qualified to AEC Q101

N-Channel Logic Level PowerTrench® MOSFET, 40 V, 110 A, 1.2 mΩ