TSM150 Series

Manufacturer: Taiwan Semiconductor Corporation

Catalog

MOSFET N-CH 40V 10A/41A 8PDFN

Part	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Power - Max	Package / Case	Package / Case
Taiwan Semiconductor Corporation TSM150NB04CR RLG	175 °C	-55 °C	N-Channel	10 A 41 A	3.1 W 56 W	10 V	20 V	4 V	Surface Mount	19 nC	1092 pF	40 V	8-PowerLDFN	15 mOhm	MOSFET (Metal Oxide)	8-PDFN	5.2	5.75
Taiwan Semiconductor Corporation TSM150NB04LCR RLG	175 °C	-55 °C	N-Channel	10 A 41 A	3.1 W 56 W	4.5 V 10 V	20 V	2.5 V	Surface Mount		966 pF	40 V	8-PowerLDFN	15 mOhm	MOSFET (Metal Oxide)	8-PDFN	5.2	5.75	18 nC
Taiwan Semiconductor Corporation TSM150NB04DCR RLG	150 °C	-55 °C		8 A 38 A				4 V	Surface Mount		1132 pF	40 V	8-PowerTDFN	15 mOhm	MOSFET (Metal Oxide)	8-PDFN (5x6)			18 nC	2 N-Channel (Dual)	2 W 40 W
Taiwan Semiconductor Corporation TSM150NB04LDCR RLG	150 °C	-55 °C		8 A 37 A				2.5 V	Surface Mount		966 pF	40 V	8-PowerTDFN	15 mOhm	MOSFET (Metal Oxide)	8-PDFN (5x6)			18 nC	2 N-Channel (Dual)	2 W 40 W
Taiwan Semiconductor Corporation TSM150P04LCS	150 °C	-55 °C	P-Channel	9 A 22 A	2.2 W 12.5 W	4.5 V 10 V	20 V	2.5 V	Surface Mount	48 nC	2783 pF	40 V	8-SOIC	15 mOhm	MOSFET (Metal Oxide)	8-SOP						0.154 in	3.9 mm
Taiwan Semiconductor Corporation TSM150P03PQ33 RGG	150 °C	-55 °C	P-Channel	36 A	27.8 W	4.5 V 10 V	20 V	2.5 V	Surface Mount		1829 pF	30 V	8-PowerWDFN	15 mOhm	MOSFET (Metal Oxide)	8-PDFN	3.1	3.1	29.3 nC