HMA270 Series

Catalog

OPTOISO 3.75KV TRANSISTOR 4SMD

Part	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Voltage - Output (Max) [Max]	Supplier Device Package	Voltage - Isolation	Input Type	Output Type	Vce Saturation (Max) [Max]	Current - Output / Channel	Current Transfer Ratio (Max) [Max]	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Number of Channels	Voltage - Forward (Vf) (Typ)	Current - DC Forward (If) (Max)	Current Transfer Ratio (Min) [Min]	Current Transfer Ratio (Max)
ON Semiconductor HMA2701BR1	100 °C	-40 °C	4-SMD Gull Wing	40 V	4-SMD	3750 Vrms	DC	1.81 mOhm	300 mV	80 mA	160 %	Surface Mount	3 µs	3 µs	1	1.3 V	50 mA	80 %
ON Semiconductor HMA2701B	100 °C	-40 °C	4-SMD Gull Wing	40 V	4-SMD	3750 Vrms	DC	1.81 mOhm	300 mV	80 mA	160 %	Surface Mount	3 µs	3 µs	1	1.3 V	50 mA	80 %
ON Semiconductor HMA2701BR4	100 °C	-40 °C	4-SMD Gull Wing	40 V	4-SMD	3750 Vrms	DC	1.81 mOhm	300 mV	80 mA	160 %	Surface Mount	3 µs	3 µs	1	1.3 V	50 mA	80 %
ON Semiconductor HMA2701AR2	100 °C	-40 °C	4-SMD Gull Wing	40 V	4-SMD	3750 Vrms	DC	1.81 mOhm	300 mV	80 mA		Surface Mount	3 µs	3 µs	1	1.3 V	50 mA	150 %	300 %
ON Semiconductor HMA2701	100 °C	-40 °C	4-SMD Gull Wing	40 V	4-SMD	3750 Vrms	DC	1.81 mOhm	300 mV	80 mA		Surface Mount	3 µs	3 µs	1	1.3 V	50 mA	50 %	300 %
ON Semiconductor HMA2701R3V	100 °C	-40 °C	4-SMD Gull Wing	40 V	4-SMD	3750 Vrms	DC	1.81 mOhm	300 mV	80 mA		Surface Mount	3 µs	3 µs	1	1.3 V	50 mA	50 %	300 %
ON Semiconductor HMA2701BR1V	100 °C	-40 °C	4-SMD Gull Wing	40 V	4-SMD	3750 Vrms	DC	1.81 mOhm	300 mV	80 mA	160 %	Surface Mount	3 µs	3 µs	1	1.3 V	50 mA	80 %
ON Semiconductor HMA2701BR4V	100 °C	-40 °C	4-SMD Gull Wing	40 V	4-SMD	3750 Vrms	DC	1.81 mOhm	300 mV	80 mA	160 %	Surface Mount	3 µs	3 µs	1	1.3 V	50 mA	80 %
ON Semiconductor HMA2701R4	100 °C	-40 °C	4-SMD Gull Wing	40 V	4-SMD	3750 Vrms	DC	1.81 mOhm	300 mV	80 mA		Surface Mount	3 µs	3 µs	1	1.3 V	50 mA	50 %	300 %
ON Semiconductor HMA2701R1	100 °C	-40 °C	4-SMD Gull Wing	40 V	4-SMD	3750 Vrms	DC	1.81 mOhm	300 mV	80 mA		Surface Mount	3 µs	3 µs	1	1.3 V	50 mA	50 %	300 %