1N5406 Series

Catalog

DIODE GEN PURP 600V 3A DO201AD

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Qualification	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Technology	Supplier Device Package	Package / Case	Capacitance @ Vr, F	Speed [Min]	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type
Taiwan Semiconductor Corporation 1N5406GH	-55 °C	150 °C	AEC-Q101	5 µA	1 V	3 A	Standard	DO-201AD	DO-201AD Axial	25 pF	200 mA 500 ns	Automotive	600 V	Through Hole
Taiwan Semiconductor Corporation 1N5406G A0G	-55 °C	150 °C		5 µA	1 V	3 A	Standard	DO-201AD	DO-201AD Axial	25 pF	200 mA 500 ns		600 V	Through Hole