SI4196 Series

Catalog

MOSFET N-CH 20V 8A 8SO

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI4196DY-T1-E3	MOSFET (Metal Oxide)	1.8 V 4.5 V	830 pF	8 V	8-SOIC	3.9 mm	0.154 in	8-SOIC	22 nC	8 A	Surface Mount	2 W 4.6 W	-55 °C	150 °C	27 mOhm	N-Channel	20 V	1 V
Vishay General Semiconductor - Diodes Division SI4196DY-T1-GE3	MOSFET (Metal Oxide)	1.8 V 4.5 V	830 pF	8 V	8-SOIC	3.9 mm	0.154 in	8-SOIC	22 nC	8 A	Surface Mount	2 W 4.6 W	-55 °C	150 °C	27 mOhm	N-Channel	20 V	1 V