MTP2P50E Series

Power MOSFET -500V -2A 6 Ohm Single P-Channel TO-220

Catalog

Power MOSFET -500V -2A 6 Ohm Single P-Channel TO-220

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Technology	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)
ON Semiconductor MTP2P50E	27 nC	20 V	10 V	6 Ohm	TO-220-3	2 A	1183 pF	-55 °C	150 °C	75 W	P-Channel	MOSFET (Metal Oxide)	4 V	Through Hole	TO-220	500 V

Catalog

Power MOSFET -500V -2A 6 Ohm Single P-Channel TO-220

Key Features

• Robust High Voltage Termination

• Avalanche Energy Specified

• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSSand VDS(on)Specified at Elevated Temperature

• Pb-Free Package is Available

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.