SSM6N813R Series
Manufacturer: Toshiba Semiconductor and Storage
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⌘K
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 100 V, 3.5 A, 0.112 Ω@10V, TSOP6F
| Part | Technology | Rds On (Max) @ Id, Vgs | Qualification | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Configuration | Supplier Device Package | Grade | Power - Max [Max] | Mounting Type | Vgs(th) (Max) @ Id | Package / Case | FET Feature | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 112 mOhm | AEC-Q101 | 175 °C | 3.6 nC | 242 pF | 3.5 A | 100 V | 2 N-Channel (Dual) | 6-TSOP-F | Automotive | 1.5 W | Surface Mount | 2.5 V | 6-SMD Flat Leads | ||
 Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 112 mOhm | AEC-Q101 | 175 °C | 3.6 nC | 242 pF | 3.5 A | 100 V | 2 N-Channel (Dual) | 6-TSOP-F | Automotive | 1.5 W | Surface Mount | 2.5 V | 6-SMD Flat Leads | 4.5 V | Logic Level Gate |