Catalog
30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | FET Type | Drain to Source Voltage (Vdss) | Technology | Mounting Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | P-Channel | 30 V | MOSFET (Metal Oxide) | Surface Mount | 3 V | 90 mOhm | 2.8 A | TO-236AB | 10 nC | 356 pF | 4.5 V 10 V | SC-59 SOT-23-3 TO-236-3 | -55 °C | 150 °C | 20 V |