FDMS7600AS Series

Dual N-Channel PowerTrench® MOSFET 30V

Catalog

Dual N-Channel PowerTrench® MOSFET 30V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Rds On (Max) @ Id, Vgs	FET Feature	Configuration	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Vgs(th) (Max) @ Id
ON Semiconductor FDMS7600AS	1750 pF	28 nC	Surface Mount	-55 °C	150 °C	1 W	7.5 mOhm	Logic Level Gate	2 N-Channel (Dual)	12 A 22 A	8-PowerWDFN	30 V	MOSFET (Metal Oxide)	Power56	3 V

Catalog

Dual N-Channel PowerTrench® MOSFET 30V

Key Features

• Q1: N-ChannelMax. RDS(on)= 7.5 mΩ at VGS= 10 V, ID= 12 AMax. RDS(on)= 12 mΩ at VGS= 4.5 V, ID= 10 A

• Q2: N-ChannelMax. RDS(on)= 2.8 mΩ at VGS= 10 V, ID= 20 AMax. RDS(on)= 3.3 mΩ at VGS= 4.5 V, ID= 18 A

• RoHS Compliant

Description

This device includes two specialized N-Channel MOSFETs in a dual-MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.