IRFD210 Series

Catalog

MOSFET N-CH 200V 600MA 4DIP

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology
Vishay General Semiconductor - Diodes Division IRFD210	1.5 Ohm	-55 °C	150 °C	4 V	Through Hole	1 W	20 V	4-DIP (0.300" 7.62mm)	200 V	140 pF	N-Channel	600 mA	8.2 nC	10 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRFD210PBF	1.5 Ohm	-55 °C	150 °C	4 V	Through Hole	1 W	20 V	4-DIP (0.300" 7.62mm)	200 V	140 pF	N-Channel	600 mA	8.2 nC	10 V	MOSFET (Metal Oxide)