2SA1020 Series

Manufacturer: Toshiba Semiconductor and Storage

Catalog

TRANS PNP 50V 2A TO92MOD

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Package / Case	Power - Max [Max]	Mounting Type	Frequency - Transition	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage 2SA1020-Y(ND1,AF)	70	150 °C	TO-226-3 TO-92-3 Long Body	900 mW	Through Hole	100 MHz	TO-92MOD	500 mV	1 µA	PNP	2 A	50 V
Toshiba Semiconductor and Storage 2SA1020-Y,T6F(J	70	150 °C	TO-226-3 TO-92-3 Long Body	900 mW	Through Hole	100 MHz	TO-92MOD	500 mV	1 µA	PNP	2 A	50 V
Toshiba Semiconductor and Storage 2SA1020-Y,F(J	70	150 °C	TO-226-3 TO-92-3 Long Body	900 mW	Through Hole	100 MHz	TO-92MOD	500 mV	1 µA	PNP	2 A	50 V
Toshiba Semiconductor and Storage 2SA1020-Y(T6TR,A,F	70	150 °C	TO-226-3 TO-92-3 Long Body	900 mW	Through Hole	100 MHz	TO-92MOD	500 mV	1 µA	PNP	2 A	50 V
Toshiba Semiconductor and Storage 2SA1020-Y(T6TOJ,FM	70	150 °C	TO-226-3 TO-92-3 Long Body	900 mW	Through Hole	100 MHz	TO-92MOD	500 mV	1 µA	PNP	2 A	50 V
Toshiba Semiconductor and Storage 2SA1020-Y(T6TR1,AF	70	150 °C	TO-226-3 TO-92-3 Long Body	900 mW	Through Hole	100 MHz	TO-92MOD	500 mV	1 µA	PNP	2 A	50 V
Toshiba Semiconductor and Storage 2SA1020-Y(T6CANOFM	70	150 °C	TO-226-3 TO-92-3 Long Body	900 mW	Through Hole	100 MHz	TO-92MOD	500 mV	1 µA	PNP	2 A	50 V
Toshiba Semiconductor and Storage 2SA1020-Y,T6NSF(J	70	150 °C	TO-226-3 TO-92-3 Long Body	900 mW	Through Hole	100 MHz	TO-92MOD	500 mV	1 µA	PNP	2 A	50 V
Toshiba Semiconductor and Storage 2SA1020-O(TE6,F,M)	70	150 °C	TO-226-3 TO-92-3 Long Body	900 mW	Through Hole	100 MHz	TO-92MOD	500 mV	1 µA	PNP	2 A	50 V