IRL630 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 200V 9A D2PAK
| Part | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs (Max) | Power Dissipation (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Technology | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 200 V | 400 mOhm | 10 V | 3.1 W 74 W | TO-263 (D2PAK) | 1100 pF | 9 A | N-Channel | 4 V 5 V | 2 V | MOSFET (Metal Oxide) | Surface Mount | 40 nC | -55 °C | 150 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |