Catalog
Nch 150V 105A, TO-263AB, Power MOSFET
Description
AI
RJ1R10BBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.
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Nch 150V 105A, TO-263AB, Power MOSFET
Nch 150V 105A, TO-263AB, Power MOSFET
| Part | Vgs (Max) | FET Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Drain to Source Voltage (Vdss) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 20 V | N-Channel | 150 °C | 105 A | 6 V 10 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 150 V | MOSFET (Metal Oxide) | 7750 pF | 8.2 mOhm | Surface Mount | TO-263AB | 130 nC | 181 W |