SI4884 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 16.5A 8SO
| Part | Technology | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | FET Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 2.5 W 4.45 W | 35 nC | 3 V | 1525 pF | 16.5 A | 8-SOIC | 9 mOhm | 4.5 V 10 V | Surface Mount | N-Channel | 20 V | 30 V | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in |