ISO6521 Series

Functional isolation dual-channel 1/1 digital isolator

Catalog

Functional isolation dual-channel 1/1 digital isolator

Part	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Channel Type	Common Mode Transient Immunity (Min) [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Technology	Voltage - Isolation	Pulse Width Distortion (Max) [Max]	Inputs - Side 1/Side 2 [custom]	Inputs - Side 1/Side 2 [custom]	Type	Propagation Delay tpLH / tpHL (Max) [Max]	Number of Channels [custom]	Data Rate	Mounting Type	Number of Channels	Inputs - Side 1/Side 2	Package / Case [y]	Package / Case [x]
Texas Instruments ISO6521FREUR	8-VSON (3x2)	125 °C	-40 °C	Unidirectional	100 V/ns	2.6 ns	2.6 ns	8-TFDFN	1.89 V 5.5 V	1.71 V 2.25 V	Capacitive Coupling	570 Vrms	7 ns	2	0	CAN RS232 RS485 SPI	18 ns	2	50 Mbps	Surface Mount
Texas Instruments ISO6521REUR	8-VSON (3x2)	125 °C	-40 °C	Unidirectional	100 V/ns	2.6 ns	2.6 ns	8-TFDFN	1.89 V 5.5 V	1.71 V 2.25 V	Capacitive Coupling	200 Vrms	7 ns	1	0	CAN RS232 RS485 SPI	18 ns		50 Mbps	Surface Mount	1
Texas Instruments ISO6521FDR	8-SOIC	125 °C	-40 °C	Unidirectional	100 V/ns	2.6 ns	2.6 ns	8-SOIC	1.89 V 5.5 V	1.71 V 2.25 V	Capacitive Coupling	707 Vrms	7 ns			CAN RS232 RS485 SPI	18 ns	2	50 Mbps	Surface Mount		1/1	3.9 mm	0.154 in

Catalog

Functional isolation dual-channel 1/1 digital isolator

Key Features

• Dual channel, CMOS output functional isolators50Mbps data rateRobust SiO2 isolation barrier with ±150kV/µs typical CMTIFunctional Isolation (8-REU):200VRMS, 280VDC working voltage570VRMS, 800VDC transient voltage (60s)Functional Isolation (8-D):450VRMS, 637VDC working voltage707VRMS, 1000VDC transient voltage (60s)Available in a compact 8-REU package with >2.2mm creepageWide supply range: 1.71V to 1.89V and 2.25V to 5.5V1.71V to 5.5V level translationDefault output High (ISO652x) and Low (ISO652xF) OptionsWide temperature range: –40°C to 125°C1.8mA per channel typical at 1Mbps at 3.3VLow propagation delay: 11ns typical at 3.3VRobust electromagnetic compatibility (EMC)System-Level ESD, EFT, and surge immunityUltra-low emissionsLeadless-DFN (8-REU) package and Narrow-SOIC (8-D) package optionsDual channel, CMOS output functional isolators50Mbps data rateRobust SiO2 isolation barrier with ±150kV/µs typical CMTIFunctional Isolation (8-REU):200VRMS, 280VDC working voltage570VRMS, 800VDC transient voltage (60s)Functional Isolation (8-D):450VRMS, 637VDC working voltage707VRMS, 1000VDC transient voltage (60s)Available in a compact 8-REU package with >2.2mm creepageWide supply range: 1.71V to 1.89V and 2.25V to 5.5V1.71V to 5.5V level translationDefault output High (ISO652x) and Low (ISO652xF) OptionsWide temperature range: –40°C to 125°C1.8mA per channel typical at 1Mbps at 3.3VLow propagation delay: 11ns typical at 3.3VRobust electromagnetic compatibility (EMC)System-Level ESD, EFT, and surge immunityUltra-low emissionsLeadless-DFN (8-REU) package and Narrow-SOIC (8-D) package options

Description

The ISO652x devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 200VRMS / 280VDC and transient over voltages of 570VRMS / 800VDC. The devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO2) insulation barrier. ISO6520 has two isolation channels with both channels in the same direction. ISO6521 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details. These devices help prevent noise currents on data buses, such as UART, SPI, RS-485, RS-232, and CAN from damaging sensitive circuitry. Through chip design and layout techniques, the electromagnetic compatibility of the devices have been significantly enhanced to ease system-level ESD and emissions compliance. The ISO652x devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 200VRMS / 280VDC and transient over voltages of 570VRMS / 800VDC. The devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO2) insulation barrier. ISO6520 has two isolation channels with both channels in the same direction. ISO6521 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details. These devices help prevent noise currents on data buses, such as UART, SPI, RS-485, RS-232, and CAN from damaging sensitive circuitry. Through chip design and layout techniques, the electromagnetic compatibility of the devices have been significantly enhanced to ease system-level ESD and emissions compliance.