FDP39N20 Series

Power MOSFET, N-Channel, UniFETTM, 200 V, 39 A, 66 mΩ, TO-220

Catalog

Power MOSFET, N-Channel, UniFETTM, 200 V, 39 A, 66 mΩ, TO-220

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology
ON Semiconductor FDP39N20	30 V	-55 °C	150 °C	200 V	TO-220-3	39 A	N-Channel	10 V	10 V 49 nC	5 V	Through Hole	TO-220-3	66 mOhm	2130 pF	MOSFET (Metal Oxide)
ON Semiconductor FDP39N20	30 V	-55 °C	150 °C	200 V	TO-220-3	39 A	N-Channel	10 V	10 V 49 nC	5 V	Through Hole	TO-220-3	66 mOhm	2130 pF	MOSFET (Metal Oxide)

Catalog

Power MOSFET, N-Channel, UniFETTM, 200 V, 39 A, 66 mΩ, TO-220

Key Features

• RDS(on)= 66 mΩ (Max.) @ VGS= 10 V, ID= 19.5 A

• Low Gate Charge (Typ. 38 nC)

• Low Crss(Typ. 57 pF)

• 100% Avalanche Tested

Description

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.