FDP52N20 Series

Power MOSFET, N-Channel, UniFETTM, 200V, 52A, 49mΩ, TO-220

Catalog

Power MOSFET, N-Channel, UniFETTM, 200V, 52A, 49mΩ, TO-220

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Mounting Type	Vgs (Max)	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
ON Semiconductor FDP52N20	-55 °C	150 °C	49 mOhm	200 V	52 A	N-Channel	TO-220-3	Through Hole	30 V	MOSFET (Metal Oxide)	TO-220-3	5 V	10 V	63 nC	2900 pF	357 W

Catalog

Power MOSFET, N-Channel, UniFETTM, 200V, 52A, 49mΩ, TO-220

Key Features

• RDS(on)= 41mΩ ( Typ.)@ VGS= 10V, ID= 26A

• Low gate charge ( Typ. 49nC)

• Low Crss( Typ. 66pF)

• 100% avalanche tested

• RoHS compliant

Description

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.