MBR60040 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULES 40V 600A SCHOTTKY RECOVERY
| Part | Voltage - Forward (Vf) (Max) @ If [Max] | Current - Average Rectified (Io) (per Diode) | Speed | Technology | Mounting Type | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Voltage - DC Reverse (Vr) (Max) [Max] | Diode Configuration | Current - Reverse Leakage @ Vr | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 750 mV | 300 A | 200 mA 500 ns | Schottky | Chassis Mount | -55 °C | 150 °C | 40 V | 1 Pair Common Anode | 1 mA | Twin Tower | Twin Tower |
GeneSiC Semiconductor | 750 mV | 300 A | 200 mA 500 ns | Schottky | Chassis Mount | -55 °C | 150 °C | 40 V | 1 Pair Common Cathode | 1 mA | Twin Tower | Twin Tower |
GeneSiC Semiconductor | 600 mV | 300 A | 200 mA 500 ns | Schottky | Chassis Mount | -55 °C | 150 °C | 40 V | 1 Pair Common Cathode | 5 mA | Twin Tower | Twin Tower |
GeneSiC Semiconductor | 600 mV | 300 A | 200 mA 500 ns | Schottky | Chassis Mount | -55 °C | 150 °C | 40 V | 1 Pair Common Anode | 5 mA | Twin Tower | Twin Tower |