Catalog
Power MOSFET, N-Ch 30V, SC70
Key Features
• Reduced Gate Charge
• Leading Edge Trench Technology for Low RDS(on)
Description
AI
Power MOSFET, N-Ch 30V, SC70
Beta
⌘K
Power MOSFET, N-Ch 30V, SC70
Power MOSFET, N-Ch 30V, SC70
| Part | Power Dissipation (Max) [Max] | FET Type | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 294 mW | N-Channel | 4.38 nC | Surface Mount | MOSFET (Metal Oxide) | 1.4 V | 30 V | SC-70 SOT-323 | -55 °C | 150 °C | 12 V | 93 mOhm | 1.6 A | 381 pF | 10 V | 2.5 V |