FCB110N65F Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 35 A, 110 mΩ, D2-PAK

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 35 A, 110 mΩ, D2-PAK

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs (Max)
ON Semiconductor FCB110N65F	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	145 nC	5 V	35 A	TO-263 (D2PAK)	650 V	110 mOhm	4895 pF	357 W	20 V

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 35 A, 110 mΩ, D2-PAK

Key Features

• 700 V @TJ= 150°C

• Typ. RDS(on)= 96 mΩ (Typ.)

• Ultra Low Gate Charge (Typ. Qg= 98 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 464 pF)

• 100% Avalanche Tested

• RoHS Compliant

Description

SuperFET®II MOSFET is the brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.SuperFET®II FRFET®MOSFET combines a faster and more rugged intrinsic body diode performance with fast switching, aimed at achieving better reliability and efficiency especially in resonant switching applications.SuperFET®II FRFET®is very suitable for the switching power applications such as server/telecom power, Solar inverter, FPD TV power, computing power, lighting and industrial power appli-cations.