MJD5731 Series

1.0 A, 350 V High Voltage PNP Bipolar Power Transistor

Catalog

1.0 A, 350 V High Voltage PNP Bipolar Power Transistor

Part	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Supplier Device Package	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]
ON Semiconductor MJD5731T4G	100 µA	10 MHz	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	30	350 V	Surface Mount	1 V	1.56 W	-55 °C	150 °C	PNP	1 A

Catalog

1.0 A, 350 V High Voltage PNP Bipolar Power Transistor

Key Features

• 350 V (Min) Vceo(sus)

• 1.0 A Rated Collector Current

• PNP Complement to the MJD47-50 Series

• These Devices are Pb-Free and are RoHS Compliant

Description

The High Voltage Bipolar PNP Power Transistor is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.