FDD357 Series
Manufacturer: ON Semiconductor
MOSFET N-CH 80V 10A TO252
| Part | Drain to Source Voltage (Vdss) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Package / Case | Rds On (Max) @ Id, Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 80 V | Surface Mount | 2800 pF | 20 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 20 mOhm | TO-252 (DPAK) | 10 A | 76 nC | 4 V | 3.4 W 69 W | 6 V 10 V |
ON Semiconductor | 80 V | Surface Mount | 2800 pF | 20 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 20 mOhm | TO-252AA | 10 A | 76 nC | 4 V | 3.4 W 69 W | 6 V 10 V |