SIR412 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 25V 20A PPAK SO-8
| Part | Rds On (Max) @ Id, Vgs | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Supplier Device Package | Mounting Type | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Technology | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 12 mOhm | N-Channel | -55 °C | 150 °C | 3.9 W 15.6 W | PowerPAK® SO-8 | Surface Mount | PowerPAK® SO-8 | 600 pF | 25 V | 16 nC | 2.5 V | 20 V | 20 A | MOSFET (Metal Oxide) | 4.5 V 10 V |