NSS1C201MZ4 Series

2.0 A, 100 V Low VCE(sat) NPN Bipolar Transistor

Catalog

2.0 A, 100 V Low VCE(sat) NPN Bipolar Transistor

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Power - Max [Max]	Frequency - Transition	Package / Case	Current - Collector (Ic) (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]
ON Semiconductor NSV1C201MZ4T1G	SOT-223 (TO-261)	-55 °C	150 °C	100 nA	120 hFE	Surface Mount	800 mW	100 MHz	TO-261-4 TO-261AA	2 A	NPN	100 V	180 mV

Catalog

2.0 A, 100 V Low VCE(sat) NPN Bipolar Transistor

Key Features

• These are PbFree Devices

• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101Qualified and PPAP Capable

Description

ON Semiconductor's family of low VCE(sat)transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat)and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows these Bipolar Transistors to be driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.