TSM120 Series

Catalog

MOSFETS 30V 39A SINGLE N-CHA NNEL POWER MOSFET

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max) [Max]	Package / Case	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Taiwan Semiconductor Corporation TSM120NA03CR RLG	30 V	150 °C	-55 °C	2.5 V	20 V	8-PDFN (5x6)	33 W	8-PowerTDFN	562 pF	11.7 mOhm	9.2 nC	N-Channel	4.5 V 10 V	MOSFET (Metal Oxide)	39 A	Surface Mount
Taiwan Semiconductor Corporation TSM120N06LCS RLG	60 V	150 °C	-55 °C	2.5 V	20 V	8-SOP		8-SOIC		12 mOhm		N-Channel	4.5 V 10 V	MOSFET (Metal Oxide)	23 A	Surface Mount	12.5 W	0.154 in	3.9 mm	2193 pF
Taiwan Semiconductor Corporation TSM120N06LCP ROG	60 V	150 °C	-55 °C	2.5 V	20 V	TO-252 (DPAK)	125 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	2118 pF	12 mOhm		N-Channel	4.5 V 10 V	MOSFET (Metal Oxide)	70 A	Surface Mount
Taiwan Semiconductor Corporation TSM120N06LCR RLG	60 V	150 °C	-55 °C	2.5 V	20 V	8-PDFN (5x6)		8-PowerTDFN		12 mOhm	36.5 nC	N-Channel	4.5 V 10 V	MOSFET (Metal Oxide)	54 A	Surface Mount				2116 pF