Catalog
650V 4A TO-263, Low-noise Power MOSFET
Description
AI
R6504ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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650V 4A TO-263, Low-noise Power MOSFET
650V 4A TO-263, Low-noise Power MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Package / Case | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Mounting Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Technology | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 220 pF | 15 nC | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 650 V | 58 W | Surface Mount | LPTS | 10 V | MOSFET (Metal Oxide) | 4 A | N-Channel | 20 V | 1.05 Ohm | 150 °C |