SI8824 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 20V 2.1A MICROFOOT
| Part | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Technology | FET Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1.2 V 4.5 V | 400 pF | 5 V | 4-XFBGA CSPBGA | 6 nC | Surface Mount | 2.1 A | 800 mV | -55 °C | 150 °C | 500 mW | MOSFET (Metal Oxide) | N-Channel | 4-Microfoot | 75 mOhm | 20 V |