SI7104 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 12V 35A PPAK 1212-8
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Mounting Type | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drain to Source Voltage (Vdss) | Supplier Device Package | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 3.7 mOhm | 35 A | 70 nC | 1.8 V | Surface Mount | PowerPAK® 1212-8 | -55 °C | 150 °C | N-Channel | 3.8 W 52 W | 2.5 V 4.5 V | 2800 pF | MOSFET (Metal Oxide) | 12 V | PowerPAK® 1212-8 | 12 V |
Vishay General Semiconductor - Diodes Division | 3.7 mOhm | 35 A | 70 nC | 1.8 V | Surface Mount | PowerPAK® 1212-8 | -55 °C | 150 °C | N-Channel | 3.8 W 52 W | 2.5 V 4.5 V | 2800 pF | MOSFET (Metal Oxide) | 12 V | PowerPAK® 1212-8 | 12 V |