PJP4 Series

Catalog

500V N-CHANNEL MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Power Dissipation (Max)	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
Panjit International Inc. PJP4NA50A_T0_00001	9.8 nC	TO-220AB	TO-220-3	90 W	30 V	4 V	Through Hole	N-Channel	4 A	2.3 Ohm	10 V	MOSFET (Metal Oxide)	500 V	449 pF	150 °C	-55 °C
Panjit International Inc. PJP4NA90_T0_00001		TO-220AB	TO-220-3		30 V	4 V	Through Hole	N-Channel	4 A	3.4 Ohm	10 V	MOSFET (Metal Oxide)	900 V		150 °C	-55 °C	140 W	710 pF	17 nC
Panjit International Inc. PJP4NA65H_T0_00001		TO-220AB	TO-220-3	44 W	30 V	4 V	Through Hole	N-Channel	3 A	3.75 Ohm	10 V	MOSFET (Metal Oxide)	650 V	423 pF	150 °C	-55 °C			16.1 nC
Panjit International Inc. PJP4NA60_T0_00001		TO-220AB	TO-220-3	100 W	30 V	4 V	Through Hole	N-Channel	4 A		10 V	MOSFET (Metal Oxide)	600 V	450 pF	150 °C	-55 °C				2.4 Ohm