DS1225A Series

64k Nonvolatile SRAM

Manufacturer: Analog Devices Inc./Maxim Integrated

Catalog

64k Nonvolatile SRAM

Part	Supplier Device Package	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Format	Memory Interface	Mounting Type	Memory Type	Write Cycle Time - Word, Page	Access Time	Technology	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Memory Size	Memory Organization	Write Cycle Time - Word, Page [custom]
Analog Devices Inc./Maxim Integrated DS1225AB-200IND+	28-EDIP	4.75 V	5.25 V	NVSRAM	Parallel	Through Hole	Non-Volatile	200 ns	200 ns	NVSRAM (Non-Volatile SRAM)	28-DIP Module (0.600" 15.24mm)	85 C	-40 ¯C	64 Kbit	8K x 8
Analog Devices Inc./Maxim Integrated DS1225AB-70	28-EDIP	4.75 V	5.25 V	NVSRAM	Parallel	Through Hole	Non-Volatile	70 ns	70 ns	NVSRAM (Non-Volatile SRAM)	28-DIP Module (0.600" 15.24mm)	70 °C	0 °C	64 Kbit	8K x 8
Analog Devices Inc./Maxim Integrated DS1225AD-200	28-EDIP	4.5 V	5.5 V	NVSRAM	Parallel	Through Hole	Non-Volatile	200 ns	200 ns	NVSRAM (Non-Volatile SRAM)	28-DIP Module (0.600" 15.24mm)	70 °C	0 °C	64 Kbit	8K x 8
Analog Devices Inc./Maxim Integrated DS1225AD-85	28-EDIP	4.5 V	5.5 V	NVSRAM	Parallel	Through Hole	Non-Volatile	85 ns	85 ns	NVSRAM (Non-Volatile SRAM)	28-DIP Module (0.600" 15.24mm)	70 °C	0 °C	64 Kbit	8K x 8
Analog Devices Inc./Maxim Integrated DS1225AD-150	28-EDIP	4.5 V	5.5 V	NVSRAM	Parallel	Through Hole	Non-Volatile		150 ns	NVSRAM (Non-Volatile SRAM)	28-DIP Module (0.600" 15.24mm)	70 °C	0 °C	64 Kbit	8K x 8	150 ns
Analog Devices Inc./Maxim Integrated DS1225AB-200+	28-EDIP	4.75 V	5.25 V	NVSRAM	Parallel	Through Hole	Non-Volatile	200 ns	200 ns	NVSRAM (Non-Volatile SRAM)	28-DIP Module (0.600" 15.24mm)	70 °C	0 °C	64 Kbit	8K x 8
Analog Devices Inc./Maxim Integrated DS1225AD-70IND+	28-EDIP	4.5 V	5.5 V	NVSRAM	Parallel	Through Hole	Non-Volatile	70 ns	70 ns	NVSRAM (Non-Volatile SRAM)	28-DIP Module (0.600" 15.24mm)	85 C	-40 ¯C	64 Kbit	8K x 8
Analog Devices Inc./Maxim Integrated DS1225AB-85+	28-EDIP	4.75 V	5.25 V	NVSRAM	Parallel	Through Hole	Non-Volatile	85 ns	85 ns	NVSRAM (Non-Volatile SRAM)	28-DIP Module (0.600" 15.24mm)	70 °C	0 °C	64 Kbit	8K x 8
Analog Devices Inc./Maxim Integrated DS1225AD-200IND+	28-EDIP	4.5 V	5.5 V	NVSRAM	Parallel	Through Hole	Non-Volatile	200 ns	200 ns	NVSRAM (Non-Volatile SRAM)	28-DIP Module (0.600" 15.24mm)	85 C	-40 ¯C	64 Kbit	8K x 8
Analog Devices Inc./Maxim Integrated DS1225AD-85+	28-EDIP	4.5 V	5.5 V	NVSRAM	Parallel	Through Hole	Non-Volatile	85 ns	85 ns	NVSRAM (Non-Volatile SRAM)	28-DIP Module (0.600" 15.24mm)	70 °C	0 °C	64 Kbit	8K x 8

Catalog

64k Nonvolatile SRAM

Description

The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 8k x 8 SRAMs directly conforming to the popular bytewide 28-pin DIP standard. The devices also match the pinout of the 2764 EPROM and the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.