SIHFR420 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 3.3A DPAK
| Part | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | FET Type | Mounting Type | Rds On (Max) @ Id, Vgs | Technology | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Vgs (Max) | Supplier Device Package | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 3400 pF | 17 nC | 10 V | 500 V | N-Channel | Surface Mount | 3 Ohm | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | -55 °C | 150 °C | 4.5 V | 30 V | TO-252AA | 83 W | 3.3 A |
Vishay General Semiconductor - Diodes Division | 360 pF | 19 nC | 10 V | 500 V | N-Channel | Surface Mount | 3 Ohm | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | -55 °C | 150 °C | 4 V | 20 V | TO-252AA | 2.5 W 42 W | 2.4 A |