SQJ142 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 40V 167A PPAK SO-8
| Part | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Grade | Input Capacitance (Ciss) (Max) @ Vds | Qualification | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Vgs (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Package / Case | Rds On (Max) @ Id, Vgs [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 3.5 V | 191 W | 40 V | Automotive | 2650 pF | AEC-Q101 | 45 nC | Surface Mount | 20 V | MOSFET (Metal Oxide) | 10 V | 167 A | -55 °C | 175 ░C | PowerPAK® SO-8 | PowerPAK® SO-8 | 3.6 mOhm | N-Channel |