MJE800(LEGACY%20FAIRCHILD) Series

4.0 A, 60 V NPN Darlington Bipolar Power Transistor

Catalog

4.0 A, 60 V NPN Darlington Bipolar Power Transistor

Part	Operating Temperature	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Power - Max [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]
ON Semiconductor MJE800STU	150 °C	TO-126-3	100 µA	2.5 V	Through Hole	40 W	TO-126-3 TO-225AA	750	60 V	4 A

Catalog

4.0 A, 60 V NPN Darlington Bipolar Power Transistor

Key Features

• High DC Current Gain -hFE= 2000 (Typ) @ IC= 2.0 Adc

• Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication

• Choice of Packages -MJE700 and MJE800 series

• Pb-Free Packages are Available

Description

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices.Replacement Active Part Number:MJE800