MBRTA800 Series

Catalog

DIODE MOD SCHOT 100V 400A 3TOWER

Part	Diode Configuration	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Mounting Type	Technology	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor MBRTA800100R	1 Pair Common Anode	1 mA	-55 °C	150 °C	200 mA 500 ns	840 mV	100 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower
GeneSiC Semiconductor MBRTA80045RL	1 Pair Common Anode	6 mA	-55 °C	150 °C	200 mA 500 ns	600 mV	45 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower
GeneSiC Semiconductor MBRTA80045	1 Pair Common Cathode	1 mA	-55 °C	150 °C	200 mA 500 ns		45 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower	720 mV
GeneSiC Semiconductor MBRTA80035	1 Pair Common Cathode	1 mA	-55 °C	150 °C	200 mA 500 ns		35 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower	720 mV
GeneSiC Semiconductor MBRTA80045L	1 Pair Common Cathode	6 mA	-55 °C	150 °C	200 mA 500 ns	600 mV	45 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower
GeneSiC Semiconductor MBRTA80020RL	1 Pair Common Anode	3 mA	-55 °C	150 °C	200 mA 500 ns	580 mV	20 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower
GeneSiC Semiconductor MBRTA800100	1 Pair Common Cathode	1 mA	-55 °C	150 °C	200 mA 500 ns	840 mV	100 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower
GeneSiC Semiconductor MBRTA80040RL	1 Pair Common Anode	5 mA	-55 °C	150 °C	200 mA 500 ns	600 mV	40 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower
GeneSiC Semiconductor MBRTA80060	1 Pair Common Cathode	1 mA	-55 °C	150 °C	200 mA 500 ns		60 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower	780 mV
GeneSiC Semiconductor MBRTA80045R	1 Pair Common Anode	1 mA	-55 °C	150 °C	200 mA 500 ns		45 V	400 A	Chassis Mount	Schottky	Three Tower	Three Tower	720 mV