P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | FET Type | Package / Case | Vgs (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Mounting Type | Technology | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 47 mOhm | 4.1 A | U-WLB1010-4 | -55 °C | 150 °C | 218 pF | 20 V | P-Channel | 4-UFBGA WLBGA | -6 V | 2.5 V 4.5 V | 1.2 V | Surface Mount | MOSFET (Metal Oxide) | 1 W | 2.3 nC |