SI4814 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET 2N-CH 30V 10A/10.5A 8SOIC
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | FET Feature | Vgs(th) (Max) @ Id | Configuration | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 30 V | 10 A 10.5 A | Logic Level Gate | 3 V | 2 N-Channel (Half Bridge) | 10 nC | 8-SOIC | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 18 mOhm | -55 °C | 150 °C | MOSFET (Metal Oxide) |