SI4116 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 25V 18A 8SO
| Part | Technology | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Power Dissipation (Max) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 1925 pF | 25 V | -55 °C | 150 °C | 8-SOIC | 1.4 V | 56 nC | N-Channel | 18 A | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 2.5 W 5 W | 12 V | 10 V | 2.5 V | 8.6 mOhm |