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30V N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30V N-channel Trench MOSFET
30V N-channel Trench MOSFET
| Part | Technology | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Type | Power Dissipation (Max) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | MOSFET (Metal Oxide) | 254 mOhm | 1.65 nC | 30 V | 1.25 V | N-Channel | 342 mW | Surface Mount | 1 A | SC-70 SOT-323 | 81 pF | 12 V | 2.5 V 4.5 V | -55 °C | 150 °C | SOT-323 |