SI4403 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 20V 15.4A 8SOIC
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Technology | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 99 nC | P-Channel | 1 V | -55 °C | 150 °C | 15.4 A | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 5 W | 20 V | 14 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 8 V | 3250 pF | Surface Mount | 8-SOIC |
Vishay General Semiconductor - Diodes Division | 50 nC | P-Channel | 1 V | -55 °C | 150 °C | 7.3 A | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 1.35 W | 20 V | 17 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 8 V | Surface Mount | 8-SOIC |