IRFPC50 Series

Catalog

MOSFET N-CH 600V 11A TO247-3

Part	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
Vishay General Semiconductor - Diodes Division IRFPC50APBF	600 V	TO-247-3	580 mOhm	10 V	-55 °C	150 °C	180 W	4 V	TO-247AC	30 V	2100 pF	N-Channel	MOSFET (Metal Oxide)	11 A	70 nC	Through Hole
Vishay General Semiconductor - Diodes Division IRFPC50	600 V	TO-247-3	600 mOhm	10 V	-55 °C	150 °C	180 W	4 V	TO-247AC	20 V		N-Channel	MOSFET (Metal Oxide)	11 A	140 nC	Through Hole