FDFS2 Series

Catalog

MOSFET P-CH 20V 3.3A 8SOIC

Part	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDFS2P102A	P-Channel	3 V	900 mW	3.3 A	8-SOIC	182 pF	8-SOIC	3.9 mm	0.154 in	20 V	4.5 V 10 V	-55 °C	150 °C	Surface Mount	20 V	Schottky Diode (Isolated)	3 nC	MOSFET (Metal Oxide)	125 mOhm
ON Semiconductor FDFS2P103	P-Channel	3 V	900 mW	5.3 A	8-SOIC	528 pF	8-SOIC	3.9 mm	0.154 in	30 V	4.5 V 10 V	-55 °C	150 °C	Surface Mount	25 V	Schottky Diode (Isolated)		MOSFET (Metal Oxide)	59 mOhm	8 nC
ON Semiconductor FDFS2P102A	P-Channel	3 V	900 mW	3.3 A	8-SOIC	182 pF	8-SOIC	3.9 mm	0.154 in	20 V	4.5 V 10 V	-55 °C	150 °C	Surface Mount	20 V	Schottky Diode (Isolated)	3 nC	MOSFET (Metal Oxide)	125 mOhm
ON Semiconductor FDFS2P102	P-Channel	2 V	900 mW	3.3 A	8-SOIC	270 pF	8-SOIC	3.9 mm	0.154 in	20 V	4.5 V 10 V	-55 °C	150 °C	Surface Mount	20 V	Schottky Diode (Isolated)	10 nC	MOSFET (Metal Oxide)	125 mOhm
ON Semiconductor FDFS2P103	P-Channel	3 V	900 mW	5.3 A	8-SOIC	528 pF	8-SOIC	3.9 mm	0.154 in	30 V	4.5 V 10 V	-55 °C	150 °C	Surface Mount	25 V	Schottky Diode (Isolated)		MOSFET (Metal Oxide)	59 mOhm	8 nC