Catalog
650V, 30A, SMD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package)
Beta
⌘K
650V, 30A, SMD, Silicon-carbide (SiC) SBD
650V, 30A, SMD, Silicon-carbide (SiC) SBD
| Part | Mounting Type | Supplier Device Package | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Current - Average Rectified (Io) | Package / Case | Voltage - Forward (Vf) (Max) @ If [Max] | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction | Technology | Speed | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | Surface Mount | TO-263L | 600 µA | 1090 pF | 30 A | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1.55 V | 650 V | 175 °C | SiC (Silicon Carbide) Schottky | 500 mA | 0 ns |